low noise amplifiers - chip 1 1 - 48 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc490 gaas phemt mmic low noise high ip3 amplifier, 12 - 17 ghz v02.0907 general description features functional diagram the hmc490 is a high dynamic range gaas phemt mmic low noise ampli er which operates between 12 and 17 ghz. the hmc490 provides 27 db of gain, 2 db noise gure and an output ip3 of 35 dbm from a +5v supply voltage. the ampli er chip can easily be integrated into multi-chip-modules (mcms) due to its small size. all data is tested with the chip in a 50 ohm test xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). noise figure: 2 db output p1db: +26 dbm gain: 27 db output ip3: +35 dbm supply voltage: +5v 50 ohm matched input/output die size: 2.78 x 1.46 x 0.1 mm electrical speci cations, t a = +25 c, vdd = 5v, idd = 200 ma* typical applications the hmc490 is ideal for use as either a lna or driver ampli er for: ? point-to-point radios ? point-to-multi-point radios ? vsat ? military & space parameter min. typ. max. min. typ. max. units frequency range 12 - 14 14 - 17 ghz gain 24 26.5 24 27 db gain variation over temperature 0.03 0.04 0.03 0.04 db/ c noise figure 2.5 2.0 db input return loss 8 12 db output return loss 8 9 db output power for 1 db compression (p1db) 22 25 23 26 dbm saturated output power (psat) 27 28 dbm output third order intercept (ip3) 32 35 dbm supply current (idd)(vdd = 5v, vgg = -0.8v typ.) 200 250 200 250 ma * adjust vgg between -2.0 to 0v to achieve idd = 200 ma typical.
low noise amplifiers - chip 1 1 - 49 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature noise figure vs. temperature output ip3 vs. temperature -20 -10 0 10 20 30 8 10121416182022 s21 s11 s22 response (db) frequency (ghz) 10 12 14 16 18 20 22 24 26 28 30 32 10 11 12 13 14 15 16 17 18 +25 c +85 c -55 c gain (db) frequency (ghz) -20 -16 -12 -8 -4 0 10 11 12 13 14 15 16 17 18 +25 c +85 c -55 c return loss (db) frequency (ghz) -14 -12 -10 -8 -6 -4 -2 0 10 11 12 13 14 15 16 17 18 +25 c +85 c -55 c return loss (db) frequency (ghz) 0 2 4 6 8 10 10 11 12 13 14 15 16 17 18 +25 c +85 c -55 c noise figure (db) frequency (ghz) 10 15 20 25 30 35 40 10 11 12 13 14 15 16 17 18 +25 c +85 c -55 c ip3 (dbm) frequency (ghz) hmc490 v02.0907 gaas phemt mmic low noise high ip3 amplifier, 12 - 17 ghz
low noise amplifiers - chip 1 1 - 50 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com p1db vs. temperature gain & noise figure vs. supply voltage@ 14 ghz, idd= 200 ma power compression @ 14 ghz reverse isolation vs. temperature psat vs. temperature 0 4 8 12 16 20 24 28 32 10 11 12 13 14 15 16 17 18 +25 c +85 c -55 c psat (dbm) frequency (ghz) 20 22 24 26 28 30 0 1 2 3 4 5 3 3.5 4 4.5 5 5.5 gain (db) noise figure (db) vdd (v) 0 5 10 15 20 25 30 -20 -16 -12 -8 -4 0 4 8 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) -70 -60 -50 -40 -30 -20 -10 0 10 11 12 13 14 15 16 17 18 +25 c +85 c -55 c isolation (db) frequency (ghz) 0 4 8 12 16 20 24 28 32 10 11 12 13 14 15 16 17 18 +25 c +85 c -55 c p1db (dbm) frequency (ghz) 14 18 22 26 30 34 0 1 2 3 4 5 100 125 150 175 200 gain ip3 noise figure gain (db), ip3 (dbm) noise figure (db) idd (ma) gain, noise figure & output ip3 vs. supply current @ 14 ghz, vdd= 5v* * idd is controlled by varying vgg hmc490 v02.0907 gaas phemt mmic low noise high ip3 amplifier, 12 - 17 ghz
low noise amplifiers - chip 1 1 - 51 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings drain bias voltage (vdd1, vdd2, vdd3) +5.5 vdc gate bias voltage (vgg1, vgg2, vgg3) -4 to 0 vdc rf input power (rfin)(vdd = +5 vdc) +10 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 29 mw/c above 85 c) 2.65 w thermal resistance (channel to die bottom) 34 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c vdd (vdc) idd (ma) +4.5 191 +5.0 200 +5.5 208 +3.0 189 +3.5 200 +4.0 208 typical supply current vs. vdd note: ampli er will operate over full voltage ranges shown above. vgg adjusted to achieve idd= 200 ma at +5.0v and +3.5v. notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond is .004 square 4. backside metallization: gold 5. bond pad metallization: gold 6. backside metal is ground. 7. connection not required for unlabeled bond pads. electrostatic sensitive device observe handling precautions die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. hmc490 v02.0907 gaas phemt mmic low noise high ip3 amplifier, 12 - 17 ghz
low noise amplifiers - chip 1 1 - 52 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram pad descriptions pad number function description interface schematic 1,8, 7 vgg1, 2, 3 gate control for ampli er. adjust to achieve id of 200 ma. please follow mmic ampli er biasing procedure application note. external bypass capacitors of 100 pf and 0.01 f are required. 2rfin this pad is ac coupled and matched to 50 ohms. 3, 4, 5 vdd1, 2, 3 power supply voltage for the ampli er. external bypass capacitors of 100 pf and 0.01 f are required. 6rfout this pad is ac coupled and matched to 50 ohms. die bottom gnd die bottom must be connected to rf/dc ground. hmc490 v02.0907 gaas phemt mmic low noise high ip3 amplifier, 12 - 17 ghz
low noise amplifiers - chip 1 1 - 53 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec- tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom- mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc490 v02.0907 gaas phemt mmic low noise high ip3 amplifier, 12 - 17 ghz
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